This paper presents the design of ultra-wideband low noise amplifier (UWB LNA). The proposed UWB LNA whose bandwidth\r\nextends from 2.5GHz to 16GHz is designed using a symmetric 3D RF integrated inductor. This UWB LNA has a gain of 11 �± 1.0 dB\r\nand a NF less than 3.3 dB.Good input and output impedance matching and good isolation are achieved over the operating frequency\r\nband. The proposed UWB LNA is driven froma 1.8V supply.The UWB LNA is designed and simulated in standard TSMC 0.18 pm\r\nCMOS technology process
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